Infineon IRF2907ZSPBF
| Manufacturer | |
| MPN | IRF2907ZSPBF |
| LCSC Part # | C3288100 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | N-Channel, Current:160A, Voltage:75V |
| Datasheet | Infineon IRF2907ZSPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 3.64nF | |
| Current - Continuous Drain(Id) | 170A | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 270nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 3.64nF |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 170A | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 270nC@10V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for a wide range of applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.2036 | $ 1.20 |
| 200+ | $ 0.466 | $ 93.20 |
| 500+ | $ 0.4506 | $ 225.30 |
| 1,000+ | $ 0.4413 | $ 441.30 |
Standard Packaging800/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 3.64nF | |
| Current - Continuous Drain(Id) | 170A | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 270nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Output Capacitance(Coss) | 3.64nF |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 170A | |
| Pd - Power Dissipation | 300W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 270nC@10V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for a wide range of applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free
C3288100 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HYG028N10NS1B | HUAYI | Similar | TO-263-2L | 776 | $ 1.4534 | ||
| IPB044N15N5ATMA1 | Infineon | Similar | TO-263 | 1,872 | $ 2.6221 | ||
| HY4008NA2B | HUAYI | Similar | TO-263-2L | 2 | $ 1.2492 | ||
| NCEP026N10D | NCE | Similar | TO-263 | 42 | $ 2.3379 | ||
| MSA004B | MIRACLE POWER | Similar | TO-263 | 800 | $0.6070 $0.6389 |