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NXP NX7002BKXB147
| Manufacturer | |
| MPN | NX7002BKXB147 |
| LCSC Part # | C3283042 |
| Packaging | - |
| Customer # | |
| Key Attributes | Dual N-channel, Current:330mA, Voltage:60V |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 330mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 407mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 2.8Ω@10V | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 330mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 407mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 2.8Ω@10V | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Type | N-Channel |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0552 | $ 0.06 |
| 200+ | $ 0.0214 | $ 4.28 |
| 500+ | $ 0.0207 | $ 10.35 |
| 1,000+ | $ 0.0203 | $ 20.30 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 330mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 407mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 2.8Ω@10V | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NXP | |
| Packaging | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 330mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 407mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 2.8Ω@10V | |
| Input Capacitance(Ciss) | 23.6pF | |
| Gate Charge(Qg) | 1nC@10V | |
| Type | N-Channel |
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Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |