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EDA ModelsEasyEDA
Infineon BSP322PL6327
| Manufacturer | |
| MPN | BSP322PL6327 |
| LCSC Part # | C3282535 |
| Packaging | SOT-223-4 |
| Customer # | |
| Key Attributes | P-Channel, Current:1A, Voltage:100V |
| Datasheet | Infineon BSP322PL6327 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | 372pF | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 1Ω@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | 372pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 1Ω@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
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Features
AI Translation
- P-channel
- Enhancement mode
- Logic level
- Avalanche rated
- Lead-free terminations; RoHS compliant
- AEC Q101 qualified
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | 372pF | |
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 1Ω@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 94pF | |
| Current - Continuous Drain(Id) | 1A | |
| Ciss-Input Capacitance | 372pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.8W | |
| Reverse Transfer Capacitance (Crss) | 51pF | |
| RDS(on) | 1Ω@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- P-channel
- Enhancement mode
- Logic level
- Avalanche rated
- Lead-free terminations; RoHS compliant
- AEC Q101 qualified
C3282535 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |