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TI RFG50N05
| Manufacturer | |
| MPN | RFG50N05 |
| LCSC Part # | C3280988 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 50V 50A 22mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs |
| Datasheet | TI RFG50N05 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 50A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 80nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 80nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
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Introduction
AI Translation
The RFP50N05 and RFG50N05 n-channel power MOSFETs are manufactured using the MegaFET process. This process features geometry approaching LSI scales, enabling optimal silicon utilization and delivering outstanding performance. They are suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and bipolar transistor emitter switches.
Features
AI Translation
- 50A, 50V
- On-resistance rDS(on) = 0.022Ω
- Unclamped Inductive Switching (UIS) SOA rated curve (single pulse)
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
- Operating temperature up to +175°C
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 50A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 80nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 50V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 80nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The RFP50N05 and RFG50N05 n-channel power MOSFETs are manufactured using the MegaFET process. This process features geometry approaching LSI scales, enabling optimal silicon utilization and delivering outstanding performance. They are suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and bipolar transistor emitter switches.
Features
AI Translation
- 50A, 50V
- On-resistance rDS(on) = 0.022Ω
- Unclamped Inductive Switching (UIS) SOA rated curve (single pulse)
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
- Operating temperature up to +175°C
C3280988 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IXFH75N10-VB | VBsemi Elec | Similar | TO-247 | 1 | $1.9434 $2.2863 | ||
| CMH52N20 | Cmos | Similar | TO-247 | 180 | $1.1444 $1.2046 | ||
| HUF75639G3 | onsemi | Similar | TO-247 | 8 | $2.1287 $3.3261 | ||
| IRFP4768PBF-JSM | JSMSEMI | Similar | TO-247 | 136 | $2.2519 $2.3704 | ||
| IXTQ96N20P-JSM | JSMSEMI | Similar | TO-247 | 66 | $2.6029 $2.7398 |