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onsemi RFP50N06_F102
| Manufacturer | |
| MPN | RFP50N06_F102 |
| LCSC Part # | C3280584 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 50A,60V N-Channel Power MOSFET |
| Datasheet | onsemi RFP50N06_F102 |
| Alternative Parts | 9 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 131W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 131W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
These N-channel power MOSFETs are manufactured using the MegaFET process. This process employs feature sizes approaching those of LSI, enabling optimal silicon utilization and delivering outstanding performance. They are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be driven directly by ICs.
Features
AI Translation
- 50A, 60V
- Drain-source on-resistance rDS(ON) = 0.022 Ω
- Temperature-compensated PSPICE model
- Peak current vs. pulse width curve
- Unclamped inductive switching (UIS) rating curve
- 175°C operating temperature
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8394 | $ 0.84 |
| 200+ | $ 0.3256 | $ 65.12 |
| 500+ | $ 0.3148 | $ 157.40 |
| 1,000+ | $ 0.3086 | $ 308.60 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 131W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 131W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.02nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel power MOSFETs are manufactured using the MegaFET process. This process employs feature sizes approaching those of LSI, enabling optimal silicon utilization and delivering outstanding performance. They are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be driven directly by ICs.
Features
AI Translation
- 50A, 60V
- Drain-source on-resistance rDS(ON) = 0.022 Ω
- Temperature-compensated PSPICE model
- Peak current vs. pulse width curve
- Unclamped inductive switching (UIS) rating curve
- 175°C operating temperature
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
C3280584 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| RFP50N06 | onsemi | TO-220AB | 92 | $ 2.7909 | ||
| NCE8290AC | NCE | TO-220-3L | 548 | $ 0.5394 | ||
| PTP6890 | HT(Shenzhen Jinyu Semicon) | TO-220 | 45 | $0.4485 $0.4983 | ||
| NTH068N068C | NH | TO-220C | 50 | $ 0.4168 | ||
| 80N07T | HL | TO-220 | 935 | $ 0.3358 | ||
| HYG200N12NS1P | HUAYI | TO-220FB-3 | 1 | $ 0.607 | ||
| DOP80N06 | DOINGTER | TO-220 | 360 | $ 0.3546 | ||
| FDP75N08 | onsemi | TO-220-3 | 0 | $ 1.1496 | ||
| KNP3610A | KIA Semicon Tech | TO-220 | 0 | $ 0.6576 |