MICROCHIP MSCM20XM16F4G

IGBT products deliver high-quality solutions for a wide range of high-voltage and high-power applications. Switching frequencies span from DC (for minimum conduction losses) to 150 kHz (for ultra-high power density SMPS applications). Each IGBT product represents the latest advances in IGBT technology, offering the optimal performance/cost combination for its target application. Silicon Carbide (SiC) is the ideal technology for applications requiring higher switching frequencies, higher efficiency, and higher power (>650V). SiC MOSFET and SiC Schottky Barrier Diode product lines improve system efficiency compared to silicon MOSFET and IGBT solutions, while reducing total cost of ownership through system miniaturization and smaller/lower-cost thermal management solutions.

• Lowest conduction losses at high temperature
• Low switching losses
• High short-circuit withstand capability
• Low gate resistance
• High avalanche capability: single-pulse avalanche and repetitive avalanche
• Proprietary SiC technology
• Lower power losses
• Easier thermal management, system miniaturization, and higher reliability

• Commercial: drives, air conditioning, power distribution
• Industrial: motor drives, welding, UPS, switch-mode power supplies, induction heating
• Transportation/Automotive: EV battery chargers, HEV powertrains, DC-DC converters, energy recovery
• Smart Energy: PV inverters, wind turbines
• Medical: MRI power supplies, X-ray power supplies