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VISHAY SQ2318AES-T1_BE3
| Manufacturer | |
| MPN | SQ2318AES-T1_BE3 |
| LCSC Part # | C3280170 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 8A SOT-23 |
| Datasheet | VISHAY SQ2318AES-T1_BE3 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| RDS(on) | 31mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| RDS(on) | 31mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
XP151A11B0MR-G is an N-channel power MOSFET featuring low on-resistance and ultra-high-speed switching characteristics. The high-speed switching capability enables efficient IC configuration, contributing to energy savings. A built-in gate protection diode provides ESD protection. The compact SOT-23 package allows high-density mounting.
Features
AI Translation
- TrenchFET Power MOSFET
- AEC-Q101 Qualified
- 100 % Rg and UIS Tested
- RoHS COMPLIANT HALOGEN FREE
Applications
AI Translation
- Notebook computers
- Mobile and portable phones
- Automotive power supplies
- Li-ion battery systems
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In-Stock: 8,135
8,135 In stock, ships now
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Minimum: 5Multiple: 5Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2929 | $ 1.46 |
| 50+ | $ 0.2596 | $ 12.98 |
| 150+ | $ 0.2454 | $ 36.81 |
| 500+ | $ 0.2276 | $ 113.80 |
| 3,000+ | $ 0.2197 | $ 659.10 |
| 6,000+ | $ 0.215 | $ 1290.00 |
Standard Packaging3000/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| RDS(on) | 31mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 99pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF | |
| RDS(on) | 31mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 553pF | |
| Gate Charge(Qg) | 13nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XP151A11B0MR-G is an N-channel power MOSFET featuring low on-resistance and ultra-high-speed switching characteristics. The high-speed switching capability enables efficient IC configuration, contributing to energy savings. A built-in gate protection diode provides ESD protection. The compact SOT-23 package allows high-density mounting.
Features
AI Translation
- TrenchFET Power MOSFET
- AEC-Q101 Qualified
- 100 % Rg and UIS Tested
- RoHS COMPLIANT HALOGEN FREE
Applications
AI Translation
- Notebook computers
- Mobile and portable phones
- Automotive power supplies
- Li-ion battery systems
C3280170 EasyEDA Library
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MDD08N10A | MDD(Microdiode Semiconductor) | SOT-23 | 1,490 | $0.0449 $0.0477 | ||
| NTD5867NLT4G-DO | DOINGTER | TO-236 | 900 | $ 0.0864 | ||
| YFW8N10MI | YFW | SOT-23-3L | 1,175 | $0.0807 $0.0896 | ||
| XRS1008L | XNRUSEMI | SOT-23-3L | 510 | $0.0441 $0.0464 | ||
| MOT1567A3 | MOT | SOT-23A | 2,065 | $ 0.1188 | ||
| HSS7N04 | HUASHUO | SOT-23-3 | 0 | $ 0.0655 | ||
| PJM10H10NSC | PJSEMI | SOT-23-3 | 0 | $ 0.0832 | ||
| HSS8N06 | HUASHUO | SOT-23L | 0 | $ 0.0655 |