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ST STN1NK60ZL
| Fabricante | |
| N.º de pieza fab. | STN1NK60ZL |
| Nº LCSC | C3280034 |
| Emb. | SOT-223 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 600V 0.3A SOT-223 |
| Hoja de Datos | ST STN1NK60ZL |
| Cumplimiento RoHS | 3 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 17.6pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 94pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 17.6pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 94pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Características
Traducción por IA
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- ESD improved capability
- Zener-protected
Aplicaciones
Traducción por IA
- Switching applications
En stock: 110
110 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 0.8475 | $ 0.85 |
| 10+ | $ 0.6989 | $ 6.99 |
| 30+ | $ 0.6254 | $ 18.76 |
| 100+ | $ 0.5519 | $ 55.19 |
| 500+ | $ 0.5079 | $ 253.95 |
| 1,000+ | $ 0.485 | $ 485.00 |
Encapsulado Estándar4000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 17.6pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 94pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 17.6pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 3.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 15Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 94pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Características
Traducción por IA
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- ESD improved capability
- Zener-protected
Aplicaciones
Traducción por IA
- Switching applications
C3280034 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| STN1NK60Z | ST | SOT-223 | 3,870 | $ 0.4606 | ||
| 1N60G-AA3-R | UTC | SOT-223 | 9,825 | $ 0.1252 | ||
| STN1HNK60 | ST | SOT-223 | 15,485 | $ 0.2644 | ||
| SP05N100TC | Siliup | SOT-223 | 2,440 | $ 0.1518 | ||
| SP05H90TC | Siliup | SOT-223 | 127 | $ 0.5399 | ||
| TO01NG | DOINGTER | SOT-223 | 3,990 | $ 0.0825 | ||
| 1N65G-AA3-R | UTC | SOT-223 | 4,935 | $ 0.1299 | ||
| STN1HNK60-VB | VBsemi Elec | SOT-223 | 50 | $ 0.6949 | ||
| FQT1N60C-VB | VBsemi Elec | SOT-223 | 20 | $0.4508 $0.5303 | ||
| VBJ165R02 | VBsemi Elec | SOT-223 | 0 | $ 0.671 |