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EDA-ModelleEasyEDA
AOS AO4498
| Hersteller | |
| Herst.-Teilenr. | AO4498 |
| LCSC-Nr. | C3279913 |
| Verp. | SOIC-8 |
| Kundennummer | |
| Hauptmerkm. | 30V 18A 2.5V 3.1W 5.5mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS |
| Datenblatt |  AOS AO4498 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternative Teile | 9 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.3nF | |
| Gate Charge(Qg) | 44.5nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.3nF | |
| Gate Charge(Qg) | 44.5nC@10V |
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Beschreibung
KI-Übersetzung
AO4498 combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low on-resistance RDS(ON). The device is ideal for load switching and battery protection applications.
Merkmale
KI-Übersetzung
- Low on-resistance R<sub>DS(on)</sub> for minimized conduction losses
- Low capacitance for minimized driving losses
- Optimized gate charge for minimized switching losses
- Lead-free device
Anwendungen
KI-Übersetzung
- DC-DC Converter - Synchronous MOSFET - Printer
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.3047 | $ 0.30 |
| 200+ | $ 0.1179 | $ 23.58 |
| 500+ | $ 0.1138 | $ 56.90 |
| 1,000+ | $ 0.1117 | $ 111.70 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.3nF | |
| Gate Charge(Qg) | 44.5nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | AOS | |
| Verp. | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 18A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3.1W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.3nF | |
| Gate Charge(Qg) | 44.5nC@10V |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
AO4498 combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low on-resistance RDS(ON). The device is ideal for load switching and battery protection applications.
Merkmale
KI-Übersetzung
- Low on-resistance R<sub>DS(on)</sub> for minimized conduction losses
- Low capacitance for minimized driving losses
- Optimized gate charge for minimized switching losses
- Lead-free device
Anwendungen
KI-Übersetzung
- DC-DC Converter - Synchronous MOSFET - Printer
C3279913 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| TW4409A | TWGMC | SOP-8 | 350 | $ 0.1778 | ||
| YJS18N03A | YANGJIE | SOP-8 | 445 | $ 0.1868 | ||
| PT4430 | HT(Shenzhen Jinyu Semicon) | SOP-8 | 2,870 | $0.1810 $0.1905 | ||
| STN4260 | STANSON Tech. | SOP-8 | 2,165 | $ 0.2566 | ||
| AO4354 | KUU | SOP-8 | 490 | $ 0.2981 | ||
| AO4268 | AOS | SOIC-8 | 1,619 | $ 0.9193 | ||
| AO4354 | AOS | SOIC-8 | 27,225 | $ 0.3484 | ||
| HGE055NE4A | CRMICRO | SOP-8 | 0 | $ 0.1952 | ||
| SL4430A | Slkor | SOP-8 | 0 | $ 0.1324 |