VISHAY SQ4532AEY-T1_BE3
| Manufacturer | |
| MPN | SQ4532AEY-T1_BE3 |
| LCSC Part # | C3279884 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | N-Channel and P-Channel, Current: 7.3A, Voltage: 30V |
| Datasheet | VISHAY SQ4532AEY-T1_BE3 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 31mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 7.8nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 123pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 31mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 7.8nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 123pF |
Introduction
This N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering exceptional performance. The device can withstand high energy in avalanche mode, and the diode features ultra-short reverse recovery time and low stored charge. It is specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Trench field-effect transistor (TrenchFET) power MOSFET
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- Switching regulators - Switching converters - Motor drivers - Relay drivers - Low-voltage bus switches - Power management for portable and battery-powered products
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.48 | $ 0.48 |
| 200+ | $ 0.1858 | $ 37.16 |
| 500+ | $ 0.1792 | $ 89.60 |
| 1,000+ | $ 0.176 | $ 176.00 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 31mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 7.8nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 123pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SOIC-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7.3A | |
| Pd - Power Dissipation | 3.3W | |
| RDS(on) | 31mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 7.8nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 123pF |
Introduction
This N-channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering exceptional performance. The device can withstand high energy in avalanche mode, and the diode features ultra-short reverse recovery time and low stored charge. It is specifically designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Trench field-effect transistor (TrenchFET) power MOSFET
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Applications
- Switching regulators - Switching converters - Motor drivers - Relay drivers - Low-voltage bus switches - Power management for portable and battery-powered products
C3279884 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 4616 | HL | SOP-8 | 2,700 | $ 0.0825 | ||
| XR4822A | XNRUSEMI | SOP-8 | 970 | $0.0775 $0.0815 | ||
| AO4620-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| AF4502CSLA-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| DMC3018LSD-13-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| FDS8960C-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| FW342-TL-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| IRF7319TR-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| NDS9952A-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 | ||
| SI4539DY-T1-JSM | JSMSEMI | SOP-8 | 0 | $ 0.3306 |