onsemi NTMD4N03R2
| Manufacturer | |
| MPN | NTMD4N03R2 |
| LCSC Part # | C3279813 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | N-Channel, 4A, 30V |
| Datasheet | onsemi NTMD4N03R2 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
Introduction
International Rectifier's 5th Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per unit area of silicon. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame to improve thermal characteristics and multi-chip packaging capability, making it well suited for various power applications. These improvements enable significant board space savings when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB mount applications, power dissipation can exceed 0.8W.
Features
- Designed for low-voltage, high-speed switching applications
- Ultra-low on-resistance for improved efficiency and extended battery life
- R DS(ON) = 0.048Ω at VGS = 10V (typical)
- R DS(ON) = 0.065Ω at VGS = 4.5V (typical)
- Micro SO-8 SMT package for board space savings
- Diode suitable for bridge circuits
- Diode features high-speed, soft-recovery characteristics
Applications
- DC-DC converters
- Computers
- Printers
- Mobile and cordless phones
- Disk drives and tape drives
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 400pF | |
| Gate Charge(Qg) | 16nC@10V | |
| Type | N-Channel |
Introduction
International Rectifier's 5th Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per unit area of silicon. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame to improve thermal characteristics and multi-chip packaging capability, making it well suited for various power applications. These improvements enable significant board space savings when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB mount applications, power dissipation can exceed 0.8W.
Features
- Designed for low-voltage, high-speed switching applications
- Ultra-low on-resistance for improved efficiency and extended battery life
- R DS(ON) = 0.048Ω at VGS = 10V (typical)
- R DS(ON) = 0.065Ω at VGS = 4.5V (typical)
- Micro SO-8 SMT package for board space savings
- Diode suitable for bridge circuits
- Diode features high-speed, soft-recovery characteristics
Applications
- DC-DC converters
- Computers
- Printers
- Mobile and cordless phones
- Disk drives and tape drives
C3279813 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |