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EDA ModelsEasyEDA
Infineon IRF2807ZSPBF
| Manufacturer | |
| MPN | IRF2807ZSPBF |
| LCSC Part # | C3279227 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET, Current:75A, Voltage:75V |
| Datasheet | Infineon IRF2807ZSPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Drain to Source Voltage | 75V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.27nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Drain to Source Voltage | 75V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 89A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.27nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Introduction
AI Translation
This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device suitable for a wide range of applications.
Features
AI Translation
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free
Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.182 | $ 1.18 |
| 200+ | $ 0.4583 | $ 91.66 |
| 500+ | $ 0.4413 | $ 220.65 |
| 1,000+ | $ 0.4336 | $ 433.60 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Drain to Source Voltage | 75V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 89A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.27nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 420pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Drain to Source Voltage | 75V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 89A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 9.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.27nF | |
| Gate Charge(Qg) | 110nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These characteristics combined make this design an extremely efficient and reliable device suitable for a wide range of applications.
Features
AI Translation
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated to maximum junction temperature Tjmax
- Lead-free
C3279227 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NCE8295AD | NCE | TO-263-2L | 1,299 | $ 0.827 | ||
| IXTA90N075T2 | Littelfuse/IXYS | TO-263 | 21 | $ 10.2868 | ||
| HT100NF80ASZ | HTCSEMI | TO-263 | 18 | $0.5099 $0.7284 | ||
| HY1908B | HUAYI | TO-263-2L | 4 | $ 0.6488 | ||
| PSMN8R7-80BS,118 | Nexperia | D2PAK | 10 | $ 2.9352 | ||
| MGH073N15N | Megain | TO-263 | 746 | $ 1.275 | ||
| SE10060B | SINO-IC | TO-263 | 0 | $ 0.7669 | ||
| BRB80N08A | BLUE ROCKET | TO-263 | 0 | $ 0.6954 | ||
| NCEP070N12D | NCE | TO-263 | 0 | $ 0.9022 | ||
| IXTA90N075T2-TRL | Littelfuse/IXYS | TO-263(D2Pak) | 0 | $ 2.3284 |