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Infineon IPD60R3K3C6ATMA1
| Manufacturer | |
| MPN | IPD60R3K3C6ATMA1 |
| LCSC Part # | C3279031 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 1.7A TO-252-3 |
| Datasheet | Infineon IPD60R3K3C6ATMA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 9pF | |
| Ciss-Input Capacitance | 93pF | |
| Pd - Power Dissipation | 18.1W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.7A | |
| Reverse Transfer Capacitance (Crss) | - | |
| RDS(on) | 3.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.6nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 9pF | |
| Ciss-Input Capacitance | 93pF | |
| Pd - Power Dissipation | 18.1W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 1.7A | |
| Reverse Transfer Capacitance (Crss) | - | |
| RDS(on) | 3.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.6nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The resulting devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Ultra-low switching and conduction losses enable switching applications that are more efficient, compact, lightweight, and thermally optimized.
Features
- Fully qualified according to JEDEC for Industrial Applications
- Halogen free mold compound, Pb-free plating
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 9pF | |
| Ciss-Input Capacitance | 93pF | |
| Pd - Power Dissipation | 18.1W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 1.7A | |
| Reverse Transfer Capacitance (Crss) | - | |
| RDS(on) | 3.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.6nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 9pF | |
| Ciss-Input Capacitance | 93pF | |
| Pd - Power Dissipation | 18.1W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 1.7A | |
| Reverse Transfer Capacitance (Crss) | - | |
| RDS(on) | 3.3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 4.6nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The resulting devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Ultra-low switching and conduction losses enable switching applications that are more efficient, compact, lightweight, and thermally optimized.
Features
- Fully qualified according to JEDEC for Industrial Applications
- Halogen free mold compound, Pb-free plating
Applications
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant-switching PWM stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS
C3279031 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |