Images for reference only
EDA ModelsEasyEDA
Taiwan Semiconductor TSM026NA03CR RLG
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM026NA03CR RLG |
| LCSC Part # | C3278476 |
| Packaging | PDFN-8(5x6) |
| Customer # | |
| Key Attributes | N-Channel, Current: 168A, Voltage: 30V |
| Datasheet | Taiwan Semiconductor TSM026NA03CR RLG |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 168A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.54nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 168A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.54nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These 300 W continuous wave (CW) gallium nitride (GaN) transistors are designed for 2450 MHz industrial, scientific, and medical (ISM) applications. These devices are suitable for CW, pulsed, cycled, and linear applications. These high-gain, high-efficiency devices are easy to use and provide long-term stable operation even in the most demanding environments.
Features
AI Translation
- Low on-resistance R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast power switching
- 100% tested for single-pulse avalanche energy (UIS) and gate resistance (Rg)
- RoHS compliant per EU Directive 2011/65/EU and WEEE Directive 2002/96/EC
- Halogen-free per IEC 61249-2-21
Applications
AI Translation
- DC-DC Converter - Battery Power Management - OR-ing FET/Load Switch
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.5139 | $ 0.51 |
| 200+ | $ 0.1991 | $ 39.82 |
| 500+ | $ 0.1929 | $ 96.45 |
| 1,000+ | $ 0.1898 | $ 189.80 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 168A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.54nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 168A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 125W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.54nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These 300 W continuous wave (CW) gallium nitride (GaN) transistors are designed for 2450 MHz industrial, scientific, and medical (ISM) applications. These devices are suitable for CW, pulsed, cycled, and linear applications. These high-gain, high-efficiency devices are easy to use and provide long-term stable operation even in the most demanding environments.
Features
AI Translation
- Low on-resistance R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast power switching
- 100% tested for single-pulse avalanche energy (UIS) and gate resistance (Rg)
- RoHS compliant per EU Directive 2011/65/EU and WEEE Directive 2002/96/EC
- Halogen-free per IEC 61249-2-21
Applications
AI Translation
- DC-DC Converter - Battery Power Management - OR-ing FET/Load Switch
C3278476 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| CMSA024N06L | Cmos | Similar | DFN-8(5x6) | 306 | $0.4946 $0.5206 | ||
| SP40N02AGNK | Siliup | Similar | PDFN-8L(5x6) | 3,887 | $0.3600 $0.4 | ||
| DON210N03T | DOINGTER | Similar | DFN-8(5x6) | 385 | $ 0.4081 | ||
| MU4008Y | MIRACLE POWER | Similar | PDFN-8L(5x6) | 1,485 | $ 0.3557 | ||
| SIDR626LDP-T1-RE3 | VISHAY | Similar | PowerPAK-SO-8DC | 2,842 | $ 1.719 |
5 more alternative parts.View all substitutes