Imágenes ilustrativas
Modelos EDAEasyEDA
onsemi SFU9224TU
| Fabricante | |
| N.º de pieza fab. | SFU9224TU |
| Nº LCSC | C3278281 |
| Emb. | IPAK |
| Número de Cliente | |
| Atrib. clave | 250V 2.5A 4V 2.5W 2.4Ω@10V 1 P-Channel IPAK Single FETs, MOSFETs RoHS |
| Hoja de Datos | onsemi SFU9224TU |
| Cumplimiento RoHS | 3 documentos disponibles |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 2.4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 16nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.5A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 2.4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 16nC@10V |
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Características
Traducción por IA
- Avalanche-rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- Lower leakage current: 10 μA (max) at VDS = -250V
- Lower RDS(ON): 1.65 Ω (typ)
Aplicaciones
Traducción por IA
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Integrated starter/alternator
- 12V system main switch
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 0.3092 | $ 0.31 |
| 200+ | $ 0.1197 | $ 23.94 |
| 500+ | $ 0.1155 | $ 57.75 |
| 1,000+ | $ 0.1134 | $ 113.40 |
Encapsulado Estándar75/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 2.4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 16nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | IPAK | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 95pF | |
| Current - Continuous Drain(Id) | 2.5A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 2.4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 16nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Avalanche-rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- Lower leakage current: 10 μA (max) at VDS = -250V
- Lower RDS(ON): 1.65 Ω (typ)
Aplicaciones
Traducción por IA
- Automotive engine control
- Powertrain management
- Solenoid and motor drivers
- Integrated starter/alternator
- 12V system main switch
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| DMP45H4D9HJ3 | DIODES | TO-251-3 | 14 | $ 1.0106 | ||
| FQU4P25TU | onsemi | IPAK | 0 | $ 0.3754 | ||
| IRFU9214PBF | VISHAY | TO-251-3 | 0 | $ 0.869 |