onsemi HUF76145S3
| Manufacturer | |
| MPN | HUF76145S3 |
| LCSC Part # | C3278196 |
| Packaging | I2PAK(TO-262) |
| Customer # | |
| Key Attributes | 30V 75A 3V 270W 4.5mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs |
| Datasheet | onsemi HUF76145S3 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 270W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 270W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Type | N-Channel |
Introduction
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can withstand high energy in avalanche mode, and the diode features extremely low reverse recovery time and stored charge. They are designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Logic-level gate drive
- 75A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.0045 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Applications
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.0709 | $ 1.07 |
| 200+ | $ 0.4151 | $ 83.02 |
| 500+ | $ 0.4012 | $ 200.60 |
| 1,000+ | $ 0.3935 | $ 393.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 270W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 270W | |
| RDS(on) | 4.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Type | N-Channel |
Introduction
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering excellent performance. The devices can withstand high energy in avalanche mode, and the diode features extremely low reverse recovery time and stored charge. They are designed for applications demanding high power efficiency, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Features
- Logic-level gate drive
- 75A, 30V
- Ultra-low on-resistance, rDS(ON) = 0.0045 Ω
- Temperature-compensated PSPICE model
- Temperature-compensated SABER model
- Thermal impedance SPICE model
- Thermal impedance SABER model
- Peak current vs. pulse width curve
- UIS rating curve
Applications
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BUK9E06-55A-VB | VBsemi Elec | TO-262 | 10 | $0.9097 $1.0702 | ||
| BUK9E08-55B,127-VB | VBsemi Elec | TO-262 | 5 | $1.1626 $1.2237 | ||
| AUIRF1010ZL-VB | VBsemi Elec | TO-262 | 5 | $1.1626 $1.2237 | ||
| IPI120N08S4-03 | Infineon | TO-262-3 | 0 | $ 5.9409 | ||
| AOW66613 | AOS | TO-262 | 0 | $ 2.2462 | ||
| IPI120N04S3-02 | Infineon | TO-262-3 | 0 | $ 5.7834 | ||
| IPI80N06S2-07 | Infineon | TO-262-3 | 0 | $ 3.7476 | ||
| PSMN4R3-80ES,127 | Nexperia | SOT-226-3 | 0 | $ 0.7085 | ||
| FDI045N10A | onsemi | I2PAK(TO-262) | 0 | $ 2.2204 | ||
| BUK9E08-55B-VB | VBsemi Elec | TO-262 | 0 | $1.3789 $1.4514 |