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ST STD9N65M2
| Manufacturer | |
| MPN | STD9N65M2 |
| LCSC Part # | C3277868 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 650V 5A 4V 60W 900mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Datasheet | ST STD9N65M2 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Features
AI Translation
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 20
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.3305 | $ 3.33 |
| 10+ | $ 3.2769 | $ 32.77 |
| 30+ | $ 3.2412 | $ 97.24 |
| 100+ | $ 3.2054 | $ 320.54 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Features
AI Translation
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
C3277868 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STD7N65M2 | ST | DPAK | 39 | $ 2.9224 | ||
| NCE65T680K | NCE | TO-252 | 1,941 | $ 0.7409 | ||
| CMD70R900 | Cmos | TO-252 | 140 | $0.3455 $0.3636 | ||
| NCE70T680K | NCE | TO-252 | 505 | $ 0.7133 | ||
| APC70R900KM | ALLPOWER | TO-252 | 1,846 | $ 0.7025 | ||
| 7NM65G-TN3-R | UTC | TO-252 | 33 | $ 0.4225 | ||
| IPD60R1K0CE | Infineon | TO-252 | 2,419 | $ 0.5387 | ||
| OSG70R750DF | ORIENTAL SEMI | TO-252 | 0 | $ 0.7831 | ||
| SIHD6N80AE-GE3 | VISHAY | TO-252AA | 0 | $ 2.2323 | ||
| TK6P65W,RQ | TOSHIBA | DPAK | 0 | $ 1.2873 |