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EDA ModelsEasyEDA
EPC EPC8010
| Manufacturer | |
| MPN | EPC8010 |
| LCSC Part # | C3277831 |
| Packaging | SMD-6P,2.1x0.9mm |
| Customer # | |
| Key Attributes | Enhancement Mode Power Transistor |
| Datasheet | EPC EPC8010 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | EPC | |
| Packaging | SMD-6P,2.1x0.9mm | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 25pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| RDS(on) | 120mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 360pC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | EPC | |
| Packaging | SMD-6P,2.1x0.9mm | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 25pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| RDS(on) | 120mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 360pC | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on- time are beneficial as well as those where on- state losses dominate.
Features
AI Translation
- Ultra High Efficiency
- Ultra Low RDS(on)
- Ultra Low QG
- Ultra Small Footprint
Applications
AI Translation
- Ultra High Speed DC-DC Conversion
- RF Envelope Tracking
- Wireless Power Transfer
- Game Console and Industrial Movement Sensing (Lidar)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.6218 | $ 3.62 |
| 10+ | $ 3.1023 | $ 31.02 |
| 30+ | $ 2.7942 | $ 83.83 |
| 100+ | $ 2.4828 | $ 248.28 |
| 500+ | $ 2.3386 | $ 1169.30 |
| 1,000+ | $ 2.2747 | $ 2274.70 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | EPC | |
| Packaging | SMD-6P,2.1x0.9mm | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 25pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| RDS(on) | 120mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 360pC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | EPC | |
| Packaging | SMD-6P,2.1x0.9mm | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Output Capacitance(Coss) | 25pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Type | Description | |
|---|---|---|
| Technology | E-mode | |
| Pd - Power Dissipation | - | |
| RDS(on) | 120mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 43pF | |
| Gate Charge(Qg) | 360pC | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on- time are beneficial as well as those where on- state losses dominate.
Features
AI Translation
- Ultra High Efficiency
- Ultra Low RDS(on)
- Ultra Low QG
- Ultra Small Footprint
Applications
AI Translation
- Ultra High Speed DC-DC Conversion
- RF Envelope Tracking
- Wireless Power Transfer
- Game Console and Industrial Movement Sensing (Lidar)
C3277831 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |