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onsemi NVB125N65S3
| Manufacturer | |
| MPN | NVB125N65S3 |
| LCSC Part # | C3277659 |
| Packaging | D2PAK-3(TO-263-3) |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 24A D2PAK-3(TO-263-3) |
| Datasheet | onsemi NVB125N65S3 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-3(TO-263-3) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.94nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-3(TO-263-3) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 24A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.94nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
AI Translation
- AEC−Q101 Qualified
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 105 mΩ
- Ultra Low Gate Charge (Typ. Qg = 46 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 439 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Applications
AI Translation
- Automotive On Board Charger
- Automotive DC/DC Converter for HEV
In-Stock: 84
84 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.0939$ 2.4752 | $ 2.48 |
| 10+ | $ 2.9487$ 2.3590 | $ 23.59 |
| 30+ | $ 2.8622$ 2.2898 | $ 68.69 |
| 100+ | $ 2.7741$ 2.2193 | $ 221.93 |
| 500+ | $ 2.7349$ 2.1880 | $ 1094.00 |
| 800+ | $ 2.717$ 2.1736 | $ 1738.88 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-3(TO-263-3) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.94nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK-3(TO-263-3) | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 24A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 62pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.94nF | |
| Gate Charge(Qg) | 46nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
AI Translation
- AEC−Q101 Qualified
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 105 mΩ
- Ultra Low Gate Charge (Typ. Qg = 46 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 439 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Applications
AI Translation
- Automotive On Board Charger
- Automotive DC/DC Converter for HEV
C3277659 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NVB099N65S3 | onsemi | D2PAK-3(TO-263-3) | 37 | $ 3.7336 | ||
| STB33N65M2 | ST | TO-263-3(D2PAK) | 4 | $ 8.0159 | ||
| IPB65R099CFD7AATMA1 | Infineon | TO-263-3 | 5 | $ 5.7122 | ||
| STB33N60DM2 | ST | TO-263-3(D2PAK) | 8 | $ 9.8079 | ||
| IPB65R041CFD7ATMA1 | Infineon | TO-263-3 | 15 | $ 10.1621 | ||
| IPB65R075CFD7AATMA1 | Infineon | TO-263-3 | 9 | $ 11.0962 | ||
| IPB65R090CFD7ATMA1 | Infineon | TO-263-3 | 0 | $ 9.3205 | ||
| IPB65R110CFDA | Infineon | TO-263-3 | 0 | $ 11.2489 | ||
| R6524KNJTL | ROHM | TO-263-3 | 0 | $ 3.2968 | ||
| NVB095N65S3F | onsemi | D2PAK-3(TO-263-3) | 0 | $ 5.1872 |