- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
VISHAY SIZ350DT-T1-GE3
| Manufacturer | |
| MPN | SIZ350DT-T1-GE3 |
| LCSC Part # | C3277304 |
| Packaging | Power-33-8(3x3) |
| Customer # | |
| Key Attributes | Dual N-Channel, Current: 18.5A, Voltage: 30V |
| Datasheet | VISHAY SIZ350DT-T1-GE3 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | Power-33-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 9.44mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | Power-33-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 9.44mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Designed specifically for broadband large-signal amplifier and oscillator applications up to 400 MHz. N-channel enhancement-mode
Features
AI Translation
- TrenchFET 4th generation power MOSFET
- High-side and low-side MOSFETs optimized pairing for 50% duty cycle
- Optimized RDS - Qg and RDS - Qgd figure of merit for improved high-frequency switching efficiency
- 100% Rg and UIS tested
Applications
AI Translation
- Synchronous buck
- DC/DC conversion
- Half-bridge
- Point-of-load
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 64
64 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6044 | $ 1.60 |
| 10+ | $ 1.334 | $ 13.34 |
| 30+ | $ 1.1849 | $ 35.55 |
| 100+ | $ 1.0178 | $ 101.78 |
| 500+ | $ 0.9424 | $ 471.20 |
| 1,000+ | $ 0.9096 | $ 909.60 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | Power-33-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 9.44mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | Power-33-8(3x3) | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 30A | |
| Pd - Power Dissipation | 3.7W | |
| RDS(on) | 9.44mΩ@4.5V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 940pF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Designed specifically for broadband large-signal amplifier and oscillator applications up to 400 MHz. N-channel enhancement-mode
Features
AI Translation
- TrenchFET 4th generation power MOSFET
- High-side and low-side MOSFETs optimized pairing for 50% duty cycle
- Optimized RDS - Qg and RDS - Qgd figure of merit for improved high-frequency switching efficiency
- 100% Rg and UIS tested
Applications
AI Translation
- Synchronous buck
- DC/DC conversion
- Half-bridge
- Point-of-load
C3277304 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DOZ35DN03 | DOINGTER | DFN3x3-8D | 2,830 | $0.1058 $0.1149 | ||
| SIZ340BDT-T1-GE3 | VISHAY | Power-33-8(3x3) | 2,583 | $ 0.5818 | ||
| ZC010DNG | DOINGTER | DFN3x3-8D | 2,165 | $0.1017 $0.1105 | ||
| HXY302DF | HXY MOSFET | DFN3X3-8L | 550 | $ 0.2179 | ||
| HAM7630N | HXY MOSFET | DFN3X3-8L | 165 | $0.1798 $0.1892 | ||
| HSBB4252 | HUASHUO | PRPAK3x3-8L | 3,045 | $ 0.3269 | ||
| TDM2472 | Techcode | PPAK-8L(3x3) | 2,750 | $ 0.1701 | ||
| SIZ348DT-T1-GE3 | VISHAY | Power-33-8(3x3) | 0 | $ 0.6034 | ||
| PE642DT | NIKO-SEM | DFN-8-EP(3x3) | 0 | $ 0.3618 | ||
| SIZF360DT-T1-GE3 | VISHAY | PowerPAIR(3x3) | 0 | $ 0.8456 |