Infineon AUIRFU8403-701TRL
| Manufacturer | |
| MPN | AUIRFU8403-701TRL |
| LCSC Part # | C3277188 |
| Packaging | TO-251-3 |
| Customer # | |
| Key Attributes | 375W 100V 180A 4V 4.7mΩ@10V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs |
| Datasheet | Infineon AUIRFU8403-701TRL |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 660pF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.171nF | |
| Gate Charge(Qg) | 143nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 660pF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.171nF | |
| Gate Charge(Qg) | 143nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and enhanced repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide range of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Applications
- Automotive applications
- Various other applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9829 | $ 0.98 |
| 200+ | $ 0.3812 | $ 76.24 |
| 500+ | $ 0.3673 | $ 183.65 |
| 1,000+ | $ 0.3611 | $ 361.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 660pF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.171nF | |
| Gate Charge(Qg) | 143nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251-3 | |
| Output Capacitance(Coss) | 660pF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| RDS(on) | 4.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.171nF | |
| Gate Charge(Qg) | 143nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and enhanced repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide range of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Applications
- Automotive applications
- Various other applications
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |