Infineon BSS64E6327
| Manufacturer | |
| MPN | BSS64E6327 |
| LCSC Part # | C3275938 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 80V 20 800mA 1 NPN NPN SOT-23 Single Bipolar Transistors RoHS |
| Datasheet | Infineon BSS64E6327 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 330mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 330mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
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Features
AI Translation
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary types: BCX 42, BSS 63 (PNP)
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 330mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 20 | |
| Pd - Power Dissipation | 330mW | |
| Current - Collector(Ic) | 800mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary types: BCX 42, BSS 63 (PNP)
C3275938 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

