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NCE NCE60P12K

Manufacturer
NCEAsian Brands
MPN
NCE60P12K
LCSC Part #
C326372
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET P-CH 60V 12A TO-252-2L
DatasheetNCE NCE60P12K
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-252-2L
Output Capacitance(Coss)90.6pF
Ciss-Input Capacitance1.6307nF
Pd - Power Dissipation60W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)12A
Reverse Transfer Capacitance (Crss)77.3pF
RDS(on)100mΩ@10V
Number1 P-Channel
Gate Charge(Qg)37.6nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))2.2V
TypeP-Channel
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Introduction

AI Translation

The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications.

Features

AI Translation
  • VDS = -60V, ID = -12A
  • RDS(ON) < 100mΩ @ VGS = -10V
  • RDS(ON) < 125mΩ @ VGS = -4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

AI Translation
  • High-side switch for full-bridge converters
  • DC/DC converter for LCD displays