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TI LM74810QDRRRQ1

Manufacturer
TI
MPN
LM74810QDRRRQ1
LCSC Part #
C3215601
Packaging
WSON-12-EP(3x3)
Customer #
Key Attributes
Ideal Diode Controller with Active Rectification and Load Dump Protection
DatasheetTI LM74810QDRRRQ1
RoHS Compliance2 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 1,956
1,956 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.7069$ 3.71
10+$ 3.1372$ 31.37
30+$ 2.7991$ 83.97
100+$ 2.4576$ 245.76
500+$ 2.3$ 1150.00
1,000+$ 2.2278$ 2227.80
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/OR Controllers, Ideal Diodes
ManufacturerTI
PackagingWSON-12-EP(3x3)
Quiescent Current408uA
Operating temperature-40℃~+150℃
Continuous Current (Imax)2.67A
FET TypeExternal FET
Voltage - Forward(Vf@If)9.1mV
Current - Output High(IOH)60mA
Gate Drive Voltage11.5V
Input Voltage (Vin)3V~65V
Voltage - DC Reverse(Vr)65V
FunctionReverse current blocking;Reverse polarity protection;Overvoltage lockout;Under-voltage lockout;With enable
Current - Output Low(IOL)2.6A
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Introduction

AI Translation

The LM74810-Q1 ideal diode controller can drive and control external back-to-back N-channel MOSFETs to simulate an ideal diode rectifier with power path on/off control and overvoltage protection. A wide input supply voltage range from 3V to 65V can protect and control ECUs powered by 12V and 24V automotive batteries. The device can withstand and protect the load from negative supply voltages as low as -65V. The integrated ideal diode controller (DGATE) can drive the first MOSFET to replace the Schottky diode for reverse input protection and output voltage hold-up. A 3.8mA strong charge pump with a 60mA peak gate pull current driver stage and short turn-on and turn-off delay times ensures fast transient response, thus ensuring robust and efficient MOSFET switching performance during automotive tests such as ISO16750 or LV124, where the ECU receives short input interruptions and AC superimposed input signals with frequencies up to 200kHz. When a second MOSFET is used in the power path, the device allows load disconnection (on/off control) and provides overvoltage protection using HGATE control. The device features adjustable overvoltage cut-off protection to provide load dump protection.

Features

AI Translation
  • AEC-Q100 qualified for automotive applications
  • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
  • Device HBM ESD classification level 2
  • Device CDM ESD classification level C4B
  • 3V to 65V input range
  • Reverse input protection down to –65V
  • Drives external back-to-back N-channel MOSFETs
  • Ideal diode operation with 9.1mV anode-to-cathode forward voltage drop regulation
  • Low reverse detection threshold (–4mV) with fast response (0.5μs)
  • Active rectification up to 200KHz
  • 60mA peak gate (DGATE) turn-on current
  • 2.6A peak DGATE turn-off current
  • Integrated 3.8mA charge pump
  • Adjustable overvoltage protection
  • 2.87μA low shutdown current (EN/UVLO = low)
  • Meets automotive ISO7637 transient requirements with appropriate TVS diode
  • Space-saving 12-pin WSON package

Applications

AI Translation
  • Automotive battery protection
  • ADAS domain controller
  • Head unit
  • High-end audio
  • Active ORing for redundant power supplies
  • Ideal diode with switch output
  • ISO16750, LV124 AC superimposition performance