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onsemi HGT1S12N60C3DS

Manufacturer
MPN
HGT1S12N60C3DS
LCSC Part #
C3194024
Packaging
TO-263AB
Customer #
Key Attributes
104W 24A 600V TO-263AB Single IGBTs
Datasheetonsemi HGT1S12N60C3DS
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufactureronsemi
PackagingTO-263AB
Td(off)270ns
Pd - Power Dissipation104W
Td(on)28ns
Current - Collector(Ic)24A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.65V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)32ns
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)380uJ
Input Capacitance(Cies)-
Output Capacitance(Coes)-
Gate Charge(Qg)71nC

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