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Infineon IFF300B12ME4PB11
| Manufacturer | |
| MPN | IFF300B12ME4PB11 |
| LCSC Part # | C3190361 |
| Packaging | - |
| Customer # | |
| Key Attributes | 20mW 300A 1.2kV FS (Field Stop) IGBT Modules RoHS |
| Datasheet | Infineon IFF300B12ME4PB11 |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | 350ns;480ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 150ns;170ns | |
| Current - Collector(Ic) | 300A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 1.05nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,300A | |
| Gate Charge(Qg) | 2.25uC | |
| Vce Saturation(VCE(sat)) | 1.75V;2.05V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 22mJ;40mJ | |
| Turn-On Energy (Eon) | 18mJ;34mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 18.5nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | 350ns;480ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 150ns;170ns | |
| Current - Collector(Ic) | 300A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 1.05nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,300A | |
| Gate Charge(Qg) | 2.25uC | |
| Vce Saturation(VCE(sat)) | 1.75V;2.05V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 22mJ;40mJ | |
| Turn-On Energy (Eon) | 18mJ;34mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 18.5nF | |
| Output Capacitance(Coes) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
EconoDUAL3 module featuring Trench/Field-Stop IGBT4 technology and Emitter-Controlled HE diodes, with PressFIT contact technology, NTC thermistor, and current-sensing shunt. The module integrates a current sensor, and incorporates an isolated baseplate with pre-applied thermal interface material for high power density.
Features
AI Translation
- Collector-emitter blocking voltage V_CES = 1200 V
- Rated collector current I_Cnom = 300 A / Maximum repetitive collector current I_CRM = 600 A
- Integrated current sensor
- Low collector-emitter saturation voltage V_CE,sat
- Maximum operating junction temperature T_vj,op = 150 °C
- Positive temperature coefficient of V_CE,sat
- PressFIT contact technology
- Pre-applied thermal interface material
- Isolation substrate
- High power density
Applications
AI Translation
- Servo drives
- High-power converters
- Motor drives
- Uninterruptible power supplies
- Wind turbines
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 311.9456 | $ 311.95 |
| 200+ | $ 120.72 | $ 24144.00 |
| 500+ | $ 116.4777 | $ 58238.85 |
| 1,000+ | $ 114.3813 | $ 114381.30 |
Standard Packaging6/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | 350ns;480ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 150ns;170ns | |
| Current - Collector(Ic) | 300A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 1.05nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,300A | |
| Gate Charge(Qg) | 2.25uC | |
| Vce Saturation(VCE(sat)) | 1.75V;2.05V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 22mJ;40mJ | |
| Turn-On Energy (Eon) | 18mJ;34mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 18.5nF | |
| Output Capacitance(Coes) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Td(off) | 350ns;480ns | |
| Pd - Power Dissipation | 20mW | |
| Td(on) | 150ns;170ns | |
| Current - Collector(Ic) | 300A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 1.05nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,300A | |
| Gate Charge(Qg) | 2.25uC | |
| Vce Saturation(VCE(sat)) | 1.75V;2.05V | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 22mJ;40mJ | |
| Turn-On Energy (Eon) | 18mJ;34mJ | |
| Operating Temperature | -40℃~+150℃ | |
| Input Capacitance(Cies) | 18.5nF | |
| Output Capacitance(Coes) | - |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
EconoDUAL3 module featuring Trench/Field-Stop IGBT4 technology and Emitter-Controlled HE diodes, with PressFIT contact technology, NTC thermistor, and current-sensing shunt. The module integrates a current sensor, and incorporates an isolated baseplate with pre-applied thermal interface material for high power density.
Features
AI Translation
- Collector-emitter blocking voltage V_CES = 1200 V
- Rated collector current I_Cnom = 300 A / Maximum repetitive collector current I_CRM = 600 A
- Integrated current sensor
- Low collector-emitter saturation voltage V_CE,sat
- Maximum operating junction temperature T_vj,op = 150 °C
- Positive temperature coefficient of V_CE,sat
- PressFIT contact technology
- Pre-applied thermal interface material
- Isolation substrate
- High power density
Applications
AI Translation
- Servo drives
- High-power converters
- Motor drives
- Uninterruptible power supplies
- Wind turbines
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |