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Infineon FP35R12KT4B15
| Manufacturer | |
| MPN | FP35R12KT4B15 |
| LCSC Part # | C3190329 |
| Packaging | - |
| Customer # | |
| Key Attributes | 210W 35A 1.2kV FS (Field Stop) IGBT Modules RoHS |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 210W | |
| Current - Collector(Ic) | 35A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 2nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,35A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 210W | |
| Current - Collector(Ic) | 35A |
| Type | Description | |
|---|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 2nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,35A |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 152.2051 | $ 152.21 |
| 200+ | $ 58.9011 | $ 11780.22 |
| 500+ | $ 56.8311 | $ 28415.55 |
| 1,000+ | $ 55.8091 | $ 55809.10 |
Standard Packaging15/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 210W | |
| Current - Collector(Ic) | 35A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 2nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,35A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 210W | |
| Current - Collector(Ic) | 35A |
| Type | Description | |
|---|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Input Capacitance(Cies) | 2nF@25V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,35A |
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |