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Infineon IRGS6B60KTRLPBF
| Manufacturer | |
| MPN | IRGS6B60KTRLPBF |
| LCSC Part # | C3171297 |
| Packaging | - |
| Customer # | |
| Key Attributes | 600V NPT (Non-Punch Through) Single IGBTs |
| Datasheet | Infineon IRGS6B60KTRLPBF |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 90W;36W | |
| Td(off) | 215ns;230ns;240ns;255ns | |
| Td(on) | 25ns;34ns;28ns;37ns | |
| Current - Collector(Ic) | 13A;7A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V;4.5V;5.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.5V;1.8V;2.2V;2.5V | |
| Reverse Recovery Time(trr) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 135uJ;245uJ;190uJ;300uJ | |
| Turn-On Energy (Eon) | 110uJ;210uJ;150uJ;260uJ | |
| Input Capacitance(Cies) | 290pF | |
| Output Capacitance(Coes) | 34pF | |
| Gate Charge(Qg) | 18.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 90W;36W | |
| Td(off) | 215ns;230ns;240ns;255ns | |
| Td(on) | 25ns;34ns;28ns;37ns | |
| Current - Collector(Ic) | 13A;7A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V;4.5V;5.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.5V;1.8V;2.2V;2.5V | |
| Reverse Recovery Time(trr) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 135uJ;245uJ;190uJ;300uJ | |
| Turn-On Energy (Eon) | 110uJ;210uJ;150uJ;260uJ | |
| Input Capacitance(Cies) | 290pF | |
| Output Capacitance(Coes) | 34pF | |
| Gate Charge(Qg) | 18.2nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low forward voltage drop non-punch-through IGBT technology
- 10µs short-circuit withstand capability
- Square reverse-biased safe operating area
- Positive temperature coefficient of forward voltage drop
- Lead-free
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.9861 | $ 3.99 |
| 200+ | $ 1.5423 | $ 308.46 |
| 500+ | $ 1.4882 | $ 744.10 |
| 1,000+ | $ 1.462 | $ 1462.00 |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 90W;36W | |
| Td(off) | 215ns;230ns;240ns;255ns | |
| Td(on) | 25ns;34ns;28ns;37ns | |
| Current - Collector(Ic) | 13A;7A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V;4.5V;5.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.5V;1.8V;2.2V;2.5V | |
| Reverse Recovery Time(trr) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 135uJ;245uJ;190uJ;300uJ | |
| Turn-On Energy (Eon) | 110uJ;210uJ;150uJ;260uJ | |
| Input Capacitance(Cies) | 290pF | |
| Output Capacitance(Coes) | 34pF | |
| Gate Charge(Qg) | 18.2nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | - | |
| Pd - Power Dissipation | 90W;36W | |
| Td(off) | 215ns;230ns;240ns;255ns | |
| Td(on) | 25ns;34ns;28ns;37ns | |
| Current - Collector(Ic) | 13A;7A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| IGBT Type | NPT (Non-Punch Through) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V;4.5V;5.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.5V;1.8V;2.2V;2.5V | |
| Reverse Recovery Time(trr) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Switching Energy(Eoff) | 135uJ;245uJ;190uJ;300uJ | |
| Turn-On Energy (Eon) | 110uJ;210uJ;150uJ;260uJ | |
| Input Capacitance(Cies) | 290pF | |
| Output Capacitance(Coes) | 34pF | |
| Gate Charge(Qg) | 18.2nC |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low forward voltage drop non-punch-through IGBT technology
- 10µs short-circuit withstand capability
- Square reverse-biased safe operating area
- Positive temperature coefficient of forward voltage drop
- Lead-free
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |