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A Power microelectronics AP50N20MP

Manufacturer
A Power microelectronicsAsian Brands
MPN
AP50N20MP
LCSC Part #
C3011397
Packaging
TO-247-3
Customer #
Key Attributes
N-Channel, Current:50A, Voltage:200V
DatasheetA Power microelectronics AP50N20MP
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerA Power microelectronics
PackagingTO-247-3
Output Capacitance(Coss)355pF
Ciss-Input Capacitance2.8nF
Pd - Power Dissipation104W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Current - Continuous Drain(Id)50A
Reverse Transfer Capacitance (Crss)101pF
RDS(on)60mΩ@10V
Number1 N-channel
Gate Charge(Qg)154nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

AP50N20MP is a silicon N-channel enhancement-mode vertical double-diffused MOSFET (VDMOSFET) fabricated using self-aligned planar technology to reduce conduction losses, improve switching performance, and enhance avalanche energy capability. This transistor is suitable for a wide range of power switching circuits, enabling system miniaturization and higher efficiency.

Features

AI Translation
  • VDS = 200V, ID = 50A
  • RDS(ON) < 60mΩ at VGS = 10V

Applications

AI Translation
  • Power Amplifiers - Motor Drivers