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Infineon IRLR2905TRPBF

Manufacturer
Infineon
MPN
IRLR2905TRPBF
LCSC Part #
C3010
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET N-CH 55V 42A DPAK(TO-252AA)
DatasheetInfineon IRLR2905TRPBF
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Output Capacitance(Coss)400pF
Ciss-Input Capacitance1.7nF
Pd - Power Dissipation110W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage55V
Current - Continuous Drain(Id)42A
Reverse Transfer Capacitance (Crss)150pF
RDS(on)27mΩ@10V
Number1 N-channel
Gate Charge(Qg)48nC
Vgs±16V
Gate Threshold Voltage (Vgs(th))2V
TypeN-Channel
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Introduction

AI Translation

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Logic level gate drive
  • Ultra-low on-resistance
  • Surface mount (IRLR2905)
  • Straight lead (IRLU2905)
  • Advanced process technology
  • Fast switching
  • Fully avalanche rated
  • Lead-free