DIODES DMP31D7LW-7
| Manufacturer | |
| MPN | DMP31D7LW-7 |
| LCSC Part # | C3001679 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | P-channel, Current: -0.58A, Breakdown Voltage: -30V |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 580mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 19pF | |
| Gate Charge(Qg) | 360pC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
-DC-DC Converters - Load Switches - Power Management Functions
In-Stock: 690
690 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2962 | $ 1.48 |
| 50+ | $ 0.2342 | $ 11.71 |
| 150+ | $ 0.2077 | $ 31.16 |
| 500+ | $ 0.1745 | $ 87.25 |
| 3,000+ | $ 0.1597 | $ 479.10 |
| 6,000+ | $ 0.1509 | $ 905.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-323 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 580mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 460mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 1.7Ω@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 19pF | |
| Gate Charge(Qg) | 360pC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Gate ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free, "Green" device
Applications
AI Translation
-DC-DC Converters - Load Switches - Power Management Functions
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

