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GigaDevice Semicon Beijing GD25Q16EEIGR product image
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GigaDevice Semicon Beijing GD25Q16EEIGRRoHS

Manufacturer
MPN
GD25Q16EEIGR
LCSC Part #
C2986331
Packaging
USON-8(2x3)
Customer #
Key Attributes
Dual and Quad Serial Flash
Datasheetpdf iconGigaDevice Semicon Beijing GD25Q16EEIGR
In-Stock: 2,213
2,213 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.5246$ 1.52
10+$ 1.3431$ 13.43
30+$ 1.2443$ 37.33
100+$ 1.1325$ 113.25
500+$ 0.58$ 290.00
1,000+$ 0.5574$ 557.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerGigaDevice Semicon Beijing
PackagingUSON-8(2x3)
Voltage - Supply2.7V~3.6V
Memory Size16Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
FeaturesWrite enable latch;Hardware write protection;Software write protection;Absolute write protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)150ms@(32KB)
Page Programming Time (Tpp)400us
Standby Supply Current11uA
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The GD25Q16E (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.

Features

AI Translation
  • 16M-bit Serial Flash
  • 2048K-Byte - 256 Bytes per programmable page
  • Standard, Dual, Quad SPI
  • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
  • Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
  • Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency
  • 133MHz for fast read with 30PF load
  • Dual I/O Data transfer up to 266Mbits/s
  • Quad I/O Data transfer up to 532Mbits/s
  • Software/Hardware Write Protection
  • Write protect all/portion of memory via software
  • Enable/Disable protection with WP# Pin
  • Top/Bottom Block protection
  • Endurance and Data Retention
  • Minimum 100,000 Program/Erase Cycles
  • 20-year data retention typical
  • Allows XiP (eXecute in Place) Operation
  • High speed Read reduce overall XiP instruction fetch time
  • Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed
  • Page Program time: 0.4ms typical
  • Sector Erase time: 45ms typical
  • Block Erase time: 0.15s/0.25s typical
  • Chip Erase time: 6s typical
  • Flexible Architecture
  • Uniform Sector of 4K-Byte
  • Uniform Block of 32/64K-Byte
  • Low Power Consumption
  • 11μA typical standby current
  • 1μA typical deep power down current
  • Advanced Security Features
  • 128-bit Unique ID for each device
  • Serial Flash Discoverable parameters (SFDP) register
  • 2x1024 -Byte Security Registers With OTP Locks
  • Single Power Supply Voltage
  • Full voltage range: 2.7-3.6V