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WUXI UNIGROUP MICRO TPW60R028DFD
| Fabricante | WUXI UNIGROUP MICROAsian Brands |
| N.º de pieza fab. | TPW60R028DFD |
| Nº LCSC | C2985887 |
| Emb. | TO-247S |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 80A TO-247S |
| Hoja de Datos | WUXI UNIGROUP MICRO TPW60R028DFD |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-247S | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.38pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.911nF | |
| Gate Charge(Qg) | 149nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-247S | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.38pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.911nF | |
| Gate Charge(Qg) | 149nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
En stock: 2
2 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 6.2549 | $ 6.25 |
| 10+ | $ 5.6229 | $ 56.23 |
| 30+ | $ 4.9178 | $ 147.53 |
| 90+ | $ 4.5392 | $ 408.53 |
| 510+ | $ 4.3638 | $ 2225.54 |
| 1,200+ | $ 4.2858 | $ 5142.96 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-247S | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.38pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.911nF | |
| Gate Charge(Qg) | 149nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | WUXI UNIGROUP MICRO | |
| Emb. | TO-247S | |
| Output Capacitance(Coss) | 390pF | |
| Pd - Power Dissipation | 450W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.38pF | |
| RDS(on) | 28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.911nF | |
| Gate Charge(Qg) | 149nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
C2985887 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| TPW65R040M | WUXI UNIGROUP MICRO | TO-247-3 | 0 | $ 5.6627 | ||
| TPW65R044MFD | WUXI UNIGROUP MICRO | TO-247-3 | 0 | $ 5.2165 | ||
| TPW60R040MFD | WUXI UNIGROUP MICRO | TO-247-3 | 0 | $ 6.1232 |