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Modèles EDAEasyEDA
ST STU4N62K3
| Fabricant | |
| Réf. Fab. | STU4N62K3 |
| Réf. LCSC | C2970611 |
| Condit. | TO-251-3 |
| Numéro Client | |
| Caract. clés | 620V 3.8A 4.5V 70W 2Ω@10V 1 N-channel N-Channel TO-251-3 Single FETs, MOSFETs RoHS |
| Fiche Technique | ST STU4N62K3 |
| Conformité RoHS | 3 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-251-3 | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 42pF | |
| Current - Continuous Drain(Id) | 3.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-251-3 | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 42pF | |
| Current - Continuous Drain(Id) | 3.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
These SuperMESH 3™ power MOSFETs are the result of improvements to STMicroelectronics' SuperMESH 3™ technology, combined with a newly optimized vertical structure. These devices feature extremely low on-resistance, excellent dynamic performance, and high avalanche capability, making them suitable for the most demanding applications.
Caractéristiques
Traduction par IA
- 100% avalanche tested
- Extremely high dv/dt capability
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
Traduction par IA
- Switching applications
En stock: 24
24 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 2.4597 | $ 2.46 |
| 10+ | $ 2.4224 | $ 24.22 |
| 30+ | $ 2.3996 | $ 71.99 |
| 100+ | $ 2.3753 | $ 237.53 |
Boîtier Standard75/Full Tube | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-251-3 | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 42pF | |
| Current - Continuous Drain(Id) | 3.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | ST | |
| Condit. | TO-251-3 | |
| Drain to Source Voltage | 620V | |
| Output Capacitance(Coss) | 42pF | |
| Current - Continuous Drain(Id) | 3.8A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
These SuperMESH 3™ power MOSFETs are the result of improvements to STMicroelectronics' SuperMESH 3™ technology, combined with a newly optimized vertical structure. These devices feature extremely low on-resistance, excellent dynamic performance, and high avalanche capability, making them suitable for the most demanding applications.
Caractéristiques
Traduction par IA
- 100% avalanche tested
- Extremely high dv/dt capability
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
Traduction par IA
- Switching applications
C2970611 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| NCE65T540I | NCE | TO-251 | 580 | $ 0.6359 | ||
| STD4NK60Z-1 | ST | IPAK | 18 | $ 1.1893 | ||
| LSU05N65A | CRMICRO | TO-251 | 30 | $ 0.2992 | ||
| FQU3N50CTU-VB | VBsemi Elec | TO-251 | 20 | $0.4738 $0.5574 | ||
| IRFU420PBF-VB | VBsemi Elec | TO-251 | 20 | $ 0.5728 | ||
| STU5N62K3 | ST | TO-251 | 0 | $ 0.1915 | ||
| CS4N65A3HD1-G | Wuxi China Resources Huajing Microelectronics | TO-251 | 0 | $ 0.3538 | ||
| NCE70T540I | NCE | TO-251 | 0 | $ 0.6233 | ||
| CR4N65A3K | CRMICRO | TO-251 | 0 | $ 0.2975 | ||
| CS4N65A3HD | Wuxi China Resources Huajing Microelectronics | TO-251(IPAK) | 0 | $ 0.4306 |