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ST STPSC20H12DY

Manufacturer
ST
MPN
STPSC20H12DY
LCSC Part #
C2970552
Packaging
TO-220-2
Customer #
Key Attributes
1 Independent 1.2kV 1.5V@20A 20A TO-220-2 Single Diodes RoHS
DatasheetST STPSC20H12DY
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220-2
Diode Configuration1 Independent
Voltage - DC Reverse (Vr) (Max)1.2kV
Operating Junction Temperature Range-40℃~+175℃
Voltage - Forward(Vf@If)1.5V@20A
Reverse Leakage Current (Ir)120uA@1200V
Current - Rectified20A
Non-Repetitive Peak Forward Surge Current140A
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Introduction

AI Translation

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Features

AI Translation
  • AEC - Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • PPAP capable
  • Operating Tj from - 40 °C to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK compliant

Applications

AI Translation
  • On board charger