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ST STD105N10F7AG
| Manufacturer | |
| MPN | STD105N10F7AG |
| LCSC Part # | C2969853 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 120W 100V 80A 8mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Datasheet | ST STD105N10F7AG |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 823pF | |
| Ciss-Input Capacitance | 4.369nF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 823pF | |
| Ciss-Input Capacitance | 4.369nF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel power MOSFET utilizes STripFET™ F7 technology with an optimized trench gate structure that achieves ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.
Features
AI Translation
- Designed specifically for automotive applications, AEC-Q101 qualified
- One of the lowest on-state resistance (RDS(on)) products on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio, strong EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 4.1981 | $ 4.20 |
| 10+ | $ 3.7253 | $ 37.25 |
| 30+ | $ 3.4313 | $ 102.94 |
| 100+ | $ 3.1275 | $ 312.75 |
| 500+ | $ 2.991 | $ 1495.50 |
| 1,000+ | $ 2.9325 | $ 2932.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 823pF | |
| Ciss-Input Capacitance | 4.369nF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 823pF | |
| Ciss-Input Capacitance | 4.369nF | |
| Pd - Power Dissipation | 120W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 36pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 61nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel power MOSFET utilizes STripFET™ F7 technology with an optimized trench gate structure that achieves ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.
Features
AI Translation
- Designed specifically for automotive applications, AEC-Q101 qualified
- One of the lowest on-state resistance (RDS(on)) products on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio, strong EMI immunity
- High avalanche ruggedness
Applications
AI Translation
- Switching applications
C2969853 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| STD100N10F7 | ST | Similar | DPAK | 698 | $ 0.7377 | ||
| IPD082N10N3G | Infineon | Similar | TO-252-3 | 972 | $ 2.1196 | ||
| CMD052N10 | Cmos | Similar | TO-252 | 200 | $0.6116 $0.6437 | ||
| IPD90N10S4-06 | Infineon | Similar | TO-252-3 | 3 | $ 2.229 | ||
| AULR3110Z-VB | VBsemi Elec | Similar | TO-252 | 20 | $1.1857 $1.2481 |