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ST STW3N170

Manufacturer
MPN
STW3N170
LCSC Part #
C2961104
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 1.7kV 2.6A TO-247
DatasheetST STW3N170
RoHS Compliance1 documents available
Alternative Parts10
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 340
340 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.6825$ 2.68
10+$ 2.2606$ 22.61
30+$ 1.9979$ 59.94
100+$ 1.7271$ 172.71
500+$ 1.6056$ 802.80
1,000+$ 1.5514$ 1551.40
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-247
Output Capacitance(Coss)50pF
Pd - Power Dissipation160W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage1.7kV
Current - Continuous Drain(Id)2.6A
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)13Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
Gate Charge(Qg)44nC@10V
Vgs±30V
TypeN-Channel

Introduction

AI Translation

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Features

AI Translation
  • Intrinsic capacitances and Q₉ minimized
  • High speed switching
  • 100% avalanche tested

Applications

AI Translation
  • Switching applications

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
MS5N170FCMASPOWERTO-24730$ 4.805
MS15N170HGC0MASPOWERTO-24715$ 7.9889
STW12N170K5STTO-247-310$ 19.4793
IXTH3N200P3HVLittelfuse/IXYSTO-247HV3$ 58.5125
MS5N200HGC0MASPOWERTO-24725$ 40.4266
MS3NH170HGC0MASPOWERTO-24728$ 10.3228
MS4N250HGC0MASPOWERTO-24717$ 31.027
MS9N170HGC0MASPOWERTO-24730$ 5.4119
IXTX4N300P3HVLittelfuse/IXYSTO-2470$ 70.8379
IXTX3N250LLittelfuse/IXYSTO-247-30$ 73.2249