Infineon/CYPRESS CY62167DV30LL-55BVXI

The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a Write operation (CE1 LOW, CE2 HIGH and WE LOW).

• Thin small outline package (TSOP-I) configurable as 1Mx16 or as 2Mx8 SRAM
• Wide voltage range: 2.2 V–3.6 V
• Ultra-low active power: Typical active current: 2 mA at f = 1 MHz
• Ultra-low standby power
• Easy memory expansion with CE1, CE2 and OC features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed / power
• Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package