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Infineon 2ED020I12-F2RoHS

Manufacturer
MPN
2ED020I12-F2
LCSC Part #
C2916131
Packaging
DSO-36
Customer #
Key Attributes
Half-Bridge 2 MOSFET、IGBT 30ns 50ns 2A DSO-36 Power Management - Specialized RoHS
Datasheetpdf iconInfineon 2ED020I12-F2
In-Stock: 153
153 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 6.5554$ 6.56
10+$ 5.6954$ 56.95
30+$ 5.1697$ 155.09
100+$ 4.73$ 473.00
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Power Management - Specialized
ManufacturerInfineon
PackagingDSO-36
Driven ConfigurationHalf-Bridge
FeaturesSaturation fault detection;Miller clamp protection
Number of Lines2
Peak Output Current(Source)2A
Propagation Delay tpHL170ns
Load TypeMOSFET、IGBT
Input Logic Level - High3.5V~5.5V
Rise Time30ns
Fall Time50ns
Propagation Delay tpLH165ns
Current - Output Low(IOL)2A
Operating Temperature-40℃~+125℃
Isolation Voltage(Vrms)1200V
Quiescent Current7mA
Input Logic Level - Low0V~1.5V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • Dual-channel isolated IGBT driver
  • For 600V/1200V IGBTs
  • 2A rail-to-rail output
  • Vcesat detection active Miller clamp
  • Coreless