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SPTECH MJ11029

Manufacturer
SPTECHAsian Brands
MPN
MJ11029
LCSC Part #
C2908034
Packaging
TO-3
Customer #
Key Attributes
Silicon PNP Darlington Power Transistor
DatasheetSPTECH MJ11029
RoHS Compliance1 documents available
Alternative Parts3
In-Stock: 25
25 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 10.8972$ 10.3524$ 10.35
10+$ 9.6166$ 9.1358$ 91.36
25+$ 8.5036$ 8.0785$ 201.96
100+$ 7.8479$ 7.4556$ 745.56
Standard Packaging25/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerSPTECH
PackagingTO-3
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff2A
Operating Temperature-55℃~+200℃
Vbe On(VBE(on))-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain18000
Pd - Power Dissipation300W
Current - Collector(Ic)50A
typePNP
Vce Saturation(VCE(sat))3.5V
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Introduction

AI Translation
  • Collector-emitter breakdown voltage: V(BR)CEO = -60 V (min)
  • High DC current gain: hFE = 1000 (min) at IC = -25A; hFE = 400 (min) at IC = -50A
  • Complementary to NPN type MJ11028

Applications

AI Translation
  • Designed as output devices in complementary general-purpose amplifier applications.

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
MJ11031SPTECHTO-312$7.9641 $8.3832
MJ11028SPTECHTO-325$10.3524 $10.8972
MJ11033SPTECHTO-326$6.3935 $6.73