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SPTECH MJ11030

Manufacturer
SPTECHAsian Brands
MPN
MJ11030
LCSC Part #
C2908033
Packaging
TO-3
Customer #
Key Attributes
Silicon NPN Darlington Power Transistor
DatasheetSPTECH MJ11030
RoHS Compliance1 documents available
Alternative Parts2
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 31
31 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 8.589$ 8.1596$ 8.16
10+$ 8.2662$ 7.8529$ 78.53
25+$ 8.0695$ 7.6661$ 191.65
100+$ 7.904$ 7.5088$ 750.88
Standard Packaging25/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerSPTECH
PackagingTO-3
Vbe Saturation(VBE(sat))4.5V
Operating Temperature-55℃~+200℃
Current - Collector Cutoff5mA
Vbe On(VBE(on))-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO90V
Emitter-Base Voltage VEBO5V
DC Current Gain18000
Pd - Power Dissipation300W
Current - Collector(Ic)50A
typeNPN
Vce Saturation(VCE(sat))3.5V

Introduction

AI Translation
  • Collector-emitter breakdown voltage: V(BR)CEO = 90 V (min)
  • High DC current gain: hFE = 1000 (min) @IC = 25A; hFE = 400 (min) @IC = 50A
  • Complementary to PNP type MJ11031

Applications

AI Translation
  • Designed as output devices in general-purpose complementary amplifier applications.

Alternative Parts

MPNManufacturerAlternative TypePackagingAvailabilityUnit Price
MJ11032SPTECHSimilarTO-317$6.2198 $6.5471
MJ10016SPTECHSimilarTO-30$ 4.629
2 more alternative parts.View all substitutes