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GigaDevice Semicon Beijing GD25Q16ETIGR product image
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GigaDevice Semicon Beijing GD25Q16ETIGR

Manufacturer
MPN
GD25Q16ETIGR
LCSC Part #
C2904431
Packaging
SOP-8
Customer #
Key Attributes
Dual and Quad Serial Flash
DatasheetGigaDevice Semicon Beijing GD25Q16ETIGR
RoHS Compliance1 documents available
Alternative Parts4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerGigaDevice Semicon Beijing
PackagingSOP-8
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection
Memory Size16Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)150ms@(32KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)400us
Standby Supply Current11uA
InterfaceSPI

Introduction

AI Translation

The GD25Q16E (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.

Features

AI Translation
  • 16M-bit Serial Flash
  • 2048K-Byte
  • 256 Bytes per programmable page
  • Standard, Dual, Quad SPI
    • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
    • Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
    • Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency
    • 133MHz for fast read with 30PF load
    • Dual I/O Data transfer up to 266Mbits/s
    • Quad I/O Data transfer up to 532Mbits/s
  • Software/Hardware Write Protection
    • Write protect all/portion of memory via software
    • Enable/Disable protection with WP# Pin
    • Top/Bottom Block protection
  • Endurance and Data Retention
    • Minimum 100,000 Program/Erase Cycles
    • 20-year data retention typical
  • Allows XiP (eXecute in Place) Operation
    • High speed Read reduce overall XiP instruction fetch time
    • Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed
    • Page Program time: 0.4ms typical
    • Sector Erase time: 45ms typical
    • Block Erase time: 0.15s/0.25s typical
    • Chip Erase time: 6s typical
  • Flexible Architecture
    • Uniform Sector of 4K-Byte
    • Uniform Block of 32/64K-Byte
  • Low Power Consumption
    • 11μA typical standby current
    • 1μA typical deep power down current
  • Advanced Security Features
    • 128-bit Unique ID for each device
    • Serial Flash Discoverable parameters (SFDP) register
    • 2x1024-Byte Security Registers With OTP Locks
  • Single Power Supply Voltage
    • Full voltage range: 2.7-3.6V
  • Package Information
    • SOP8 150mil
    • SOP8 208mil
    • USON8 (3x2mm, 0.45mm thickness)
    • USON8 (3x4mm)
    • USON8 (4x4mm, 0.45mm thickness)
    • WSON8 (6x5mm)