onsemi NTHL067N65S3H
| Manufacturer | |
| MPN | NTHL067N65S3H |
| LCSC Part # | C2902088 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 40A TO-247 |
| Datasheet | onsemi NTHL067N65S3H |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 60pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.75nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 60pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.75nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
Features
- 700 V @ T_J = 150°C
- Typ. R_DS(on) = 55 mΩ
- Ultra Low Gate Charge (Typ. Q_g = 80 nC)
- Low Effective Output Capacitance (Typ. C_0ss(eff.) = 691 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.9558 | $ 4.96 |
| 10+ | $ 4.1577 | $ 41.58 |
| 30+ | $ 3.6824 | $ 110.47 |
| 90+ | $ 3.2023 | $ 288.21 |
| 510+ | $ 2.981 | $ 1520.31 |
| 990+ | $ 2.8811 | $ 2852.29 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 60pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.75nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 60pF | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.75nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
Features
- 700 V @ T_J = 150°C
- Typ. R_DS(on) = 55 mΩ
- Ultra Low Gate Charge (Typ. Q_g = 80 nC)
- Low Effective Output Capacitance (Typ. C_0ss(eff.) = 691 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar
C2902088 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTHL019N65S3H | onsemi | TO-247 | 2 | $ 28.7234 | ||
| STWA68N65DM6 | ST | TO-247 | 10 | $ 16.9205 | ||
| SP50MF65TF | Siliup | TO-247 | 80 | $3.1076 $3.8845 | ||
| BMW65N065UC1 | Bestirpower | TO247-3 | 172 | $ 2.2066 | ||
| XR65R75FRH | XNRUSEMI | TO-247 | 30 | $2.6919 $2.8335 | ||
| SPW35N60C3-HXY | HXY MOSFET | TO-247 | 49 | $ 3.1908 | ||
| FCH067N65S3-F155 | onsemi | TO-247-3 | 0 | $ 5.6317 | ||
| NVHL072N65S3 | onsemi | TO-247-3 | 0 | $ 6.6801 | ||
| STW56N60M2 | ST | TO-247-3 | 0 | $ 1.8319 | ||
| NVHL082N65S3F | onsemi | TO-247-3 | 0 | $ 7.1184 |



