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Jiangsu JieJie Microelectronics JMTL2N7002KS
| Manufacturer | Jiangsu JieJie MicroelectronicsAsian Brands |
| MPN | JMTL2N7002KS |
| LCSC Part # | C2890419 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 0.25A SOT-23 |
| Datasheet | Jiangsu JieJie Microelectronics JMTL2N7002KS |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jiangsu JieJie Microelectronics | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 11pF | |
| Ciss-Input Capacitance | 28pF | |
| Pd - Power Dissipation | 230mW | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 250mA | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 2.87Ω@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.7nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jiangsu JieJie Microelectronics | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 11pF | |
| Ciss-Input Capacitance | 28pF | |
| Pd - Power Dissipation | 230mW | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 250mA | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 2.87Ω@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.7nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- VDS = 60 V, ID = 0.25 A
- RDS(ON) < 2.2 Ω, @ VGS = 10 V
- RDS(ON) < 2.87 Ω, @ VGS = 5 V
- Advanced trench technology
- Superior RDS(ON) and low gate charge
- Lead-free certified
- ESD protection: 2KV
Applications
AI Translation
- Battery-powered systems
- Direct logic-level interface: TTL/CMOS
- Solid-state relays
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100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jiangsu JieJie Microelectronics | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 11pF | |
| Ciss-Input Capacitance | 28pF | |
| Pd - Power Dissipation | 230mW | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 250mA | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 2.87Ω@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.7nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jiangsu JieJie Microelectronics | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 11pF | |
| Ciss-Input Capacitance | 28pF | |
| Pd - Power Dissipation | 230mW | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 250mA | |
| Reverse Transfer Capacitance (Crss) | 4pF | |
| RDS(on) | 2.87Ω@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.7nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (R_DS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- VDS = 60 V, ID = 0.25 A
- RDS(ON) < 2.2 Ω, @ VGS = 10 V
- RDS(ON) < 2.87 Ω, @ VGS = 5 V
- Advanced trench technology
- Superior RDS(ON) and low gate charge
- Lead-free certified
- ESD protection: 2KV
Applications
AI Translation
- Battery-powered systems
- Direct logic-level interface: TTL/CMOS
- Solid-state relays
C2890419 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |