JSMSEMI IRLML2502TRPBF-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | IRLML2502TRPBF-JSM |
| LCSC Part # | C2874693 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 4.5A SOT-23 |
| Datasheet | JSMSEMI IRLML2502TRPBF-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 116pF | |
| Ciss-Input Capacitance | 578pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 96pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 116pF | |
| Ciss-Input Capacitance | 578pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 96pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Introduction
The 2502 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
Features
- 20V/4.5A, RDS(ON)=25mΩ (typ.)@VGS=4.5V
- 20V/2.5A, RDS(ON)=55mΩ (typ.)@VGS=2.5V
- 20V/2.0A, RDS(ON)=80mΩ (typ.)@VGS=1.8V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOT23-3L package design
Applications
- Power Management Portable Equipment
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 116pF | |
| Ciss-Input Capacitance | 578pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 96pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 116pF | |
| Ciss-Input Capacitance | 578pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.5A | |
| Reverse Transfer Capacitance (Crss) | 96pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@4.5V | |
| Vgs | ±10V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Introduction
The 2502 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
Features
- 20V/4.5A, RDS(ON)=25mΩ (typ.)@VGS=4.5V
- 20V/2.5A, RDS(ON)=55mΩ (typ.)@VGS=2.5V
- 20V/2.0A, RDS(ON)=80mΩ (typ.)@VGS=1.8V
- Super high design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Full RoHS compliance
- SOT23-3L package design
Applications
- Power Management Portable Equipment
- DC/DC Converter
- Load Switch
- DSC
- LCD Display inverter
C2874693 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



