JSMSEMI AOD409
| Manufacturer | JSMSEMIAsian Brands |
| MPN | AOD409 |
| LCSC Part # | C2874627 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET 60V 26A TO-252(DPAK) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 26A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications.
Features
AI Translation
- TO-252(DPAK) packaging
- High speed switching
- Low gate input resistance
- Standard level gate drive
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
Applications
AI Translation
- Power supply
- Switching applications
In-Stock: 2,353
2,353 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4585 | $ 0.46 |
| 10+ | $ 0.3536 | $ 3.54 |
| 30+ | $ 0.3084 | $ 9.25 |
| 100+ | $ 0.2519 | $ 25.19 |
| 500+ | $ 0.2422 | $ 121.10 |
| 1,000+ | $ 0.2277 | $ 227.70 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 26A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Pd - Power Dissipation | 60W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications.
Features
AI Translation
- TO-252(DPAK) packaging
- High speed switching
- Low gate input resistance
- Standard level gate drive
- Easy to use
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
Applications
AI Translation
- Power supply
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



