TI UCC5390ECQDWVRQ1

The UCC5390-Q1 is a single-channel isolated gate driver with a 10A peak sourcing current and a 10A peak sinking current, designed to drive MOSFETs, IGBTs, and SiC MOSFETs. The UVLO2 of the UCC5390-Q1 is referenced to GND2, which facilitates the use of bipolar power supplies and optimizes the switching behavior and robustness of SiC and IGBTs. The UCC5390-Q1 comes in an 8.5mm SOIC-8 (DWV) package and can support an isolation voltage of up to 5kVRMS. The input side is isolated from the output side by SiO₂ capacitive isolation technology, and the isolation layer has a lifespan of over 40 years. With high drive strength and true UVLO detection, this device is well-suited for driving IGBTs and SiC MOSFETs in applications such as on-board chargers and traction inverters. Compared with optocouplers, the UCC5390-Q1 has lower part-to-part skew, shorter propagation delay, a higher operating temperature, and a higher CMTI.

• 5kV_RMS single-channel isolated gate driver, AEC-Q100 qualified, temperature grade 1 for automotive applications
• HBM ESD classification level H2
• CDM ESD classification level C6
• 12V UVLO referenced to GND2
• 8-pin DWV (8.5mm creepage) package
• 60ns (typical) propagation delay
• Small part-to-part propagation delay skew
• 100V/ns minimum CMTI
• 10A minimum peak current
• 3V to 15V input supply voltage
• Driver supply voltage up to 33V
• Input pins with -5V voltage handling capability
• Safety-related certification: 7000Vₚₖ isolation (DWV) per DIN V VDE V 0884-11:2017-01 (planned)
• 5000V_RMS (DWV) isolation rating for 1 minute (per UL 1577)
• CQC certified per GB4943.1-2011
• CMOS input
• Operating junction temperature range: -40°C to +150°C

• On-board charger
• Traction inverter for electric vehicles
• DC charging station