- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
ROHM DTD143ECHZGT116
| Hersteller | |
| Herst.-Teilenr. | DTD143ECHZGT116 |
| LCSC-Nr. | C2846666 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | TRANS PREBIAS NPN 50V SOT-23 |
| Datenblatt | ROHM DTD143ECHZGT116 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 47 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 500mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 47 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 500mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
- Only the on/off conditions need to be set for operation, making the device design easy.
Anwendungen
KI-Übersetzung
- INVERTER
- INTERFACE
- DRIVER
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 47 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 500mA | |
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | SOT-23 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 200MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 47 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Current - Collector(Ic) | 500mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV | |
| Input Resistor | 4.7kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV | |
| Operating temperature | -40℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit)
- The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
- Only the on/off conditions need to be set for operation, making the device design easy.
Anwendungen
KI-Übersetzung
- INVERTER
- INTERFACE
- DRIVER
C2846666 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |