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TOSHIBA TK10P60W,RVQ(S
| Manufacturer | |
| MPN | TK10P60W,RVQ(S |
| LCSC Part # | C2840188 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 9.7A DPAK |
| Datasheet | TOSHIBA TK10P60W,RVQ(S |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 20pF | |
| Pd - Power Dissipation | 80W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 20pF | |
| Pd - Power Dissipation | 80W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
TF040N03N combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low drain-to-source on-resistance (RDS(ON)). The device is ideal for load switching and battery protection applications.
Features
AI Translation
- Low drain-source on-resistance: RDS(ON)=0.327 Ω (typ.) by used to Super Junction Structure: DTMOS
- Easy to control Gate switching
- Enhancement mode: Vth=2.7 to 3.7 V (ΔVDS=10 V, ID=0.5 mA)
Applications
AI Translation
- Switching Voltage Regulators
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In-Stock: 3,158
3,158 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8063 | $ 0.81 |
| 10+ | $ 0.7299 | $ 7.30 |
| 30+ | $ 0.6878 | $ 20.63 |
| 100+ | $ 0.5724 | $ 57.24 |
| 500+ | $ 0.5521 | $ 276.05 |
| 1,000+ | $ 0.5412 | $ 541.20 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 20pF | |
| Pd - Power Dissipation | 80W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.7A | |
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 20pF | |
| Pd - Power Dissipation | 80W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.7V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF | |
| RDS(on) | 430mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 700pF | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
TF040N03N combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low drain-to-source on-resistance (RDS(ON)). The device is ideal for load switching and battery protection applications.
Features
AI Translation
- Low drain-source on-resistance: RDS(ON)=0.327 Ω (typ.) by used to Super Junction Structure: DTMOS
- Easy to control Gate switching
- Enhancement mode: Vth=2.7 to 3.7 V (ΔVDS=10 V, ID=0.5 mA)
Applications
AI Translation
- Switching Voltage Regulators
C2840188 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TK380P60Y,RQ | TOSHIBA | TO-252 | 527 | $0.1879 $1.3419 | ||
| GC11N65K | GOFORD | TO-252-2 | 1 | $ 0.9039 | ||
| 650SJ320 | HL | TO-252 | 378 | $0.6321 $0.6653 | ||
| TK10P60W,RVQ | TOSHIBA | DPAK | 0 | $ 2.0652 | ||
| TK380P65Y,RQ | TOSHIBA | TO-252-2(DPAK) | 0 | $ 1.2278 | ||
| IPD50R399CP-VB | VBsemi Elec | TO-252 | 0 | $ 1.7247 | ||
| IPD60R380C6-VB | VBsemi Elec | TO-252 | 0 | $ 1.7247 | ||
| IPD60R380E6-VB | VBsemi Elec | TO-252 | 0 | $ 1.7247 | ||
| IPD60R380P6-VB | VBsemi Elec | TO-252 | 0 | $ 1.7247 | ||
| IPD60R385CP-VB | VBsemi Elec | TO-252 | 0 | $ 1.7247 |