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HUASHUO HSBB4202
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSBB4202 |
| LCSC Part # | C28314517 |
| Packaging | PRPAK-8(3x3) |
| Customer # | |
| Key Attributes | Dual N-Channel, Current: 20A, Voltage: 40V |
| Datasheet | HUASHUO HSBB4202 |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK-8(3x3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 76pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 593pF | |
| Gate Charge(Qg) | 5.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK-8(3x3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 76pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 593pF | |
| Gate Charge(Qg) | 5.5nC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBB4202 is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB4202 complies with RoHS and green product requirements, is 100% guaranteed with robust avalanche capability (E<sub>AS</sub>), and has passed full functional reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green & eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.2058 | $ 1.03 |
| 50+ | $ 0.1632 | $ 8.16 |
| 150+ | $ 0.1449 | $ 21.74 |
| 500+ | $ 0.1221 | $ 61.05 |
| 2,500+ | $ 0.1119 | $ 279.75 |
| 5,000+ | $ 0.1058 | $ 529.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK-8(3x3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 76pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 593pF | |
| Gate Charge(Qg) | 5.5nC@4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK-8(3x3) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 76pF | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 593pF | |
| Gate Charge(Qg) | 5.5nC@4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBB4202 is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBB4202 complies with RoHS and green product requirements, is 100% guaranteed with robust avalanche capability (E<sub>AS</sub>), and has passed full functional reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green & eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C28314517 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |